How_Target_Physical_Properties_Affect_Thin-Body_Semiconductor_Doping_When_Using_Energetic_Ions_A_Modeling-Based_Analysis
Semiconductors
Using a binary collision approximation model and SRIM software, the authors investigated the effects of different target atomic densities, lattice densities, surface binding energies, and lattice binding energies on target sputtering, dose retention, and damage formation.
The importance of SRIM software, which provides methods to study ion implantation processes and physics, and explains the effects of energy transfer on atoms in the target.
This paper explores how to alter the effects of target materials on target sputtering, dose retention, and damage formation caused by the doping of energy ions in thin-body semiconductors.
semiconductor device doping
The authors conducted a simulation study to explore the effects of target physical properties on dose retention and target damage, and provided important insights into multi-gate field-effect transistor systems.
SRIM software provides a way to study the ion implantation process and physics, and explains the effects of energy transfer on atoms in the target.
The development of multi-gate field-effect transistors and the study of the doping problem of thin-body silicon are mentioned,and the influence of different target materials on energy ions is discussed.
The atomic density, lattice density, surface binding energy and lattice binding energy of the target material have important effects on target sputtering, dose retention, and damage formation.
SRIM software provides a method to study the ion implantation process and physics, and explains the effects of energy transfer on atoms in the target.
The surface binding energy of the target material is an important factor in damage assessment as it directly affects the sputtering.
Using a binary collision approximation model and SRIM software, the authors investigated the effects of different target atomic densities, lattice densities, surface binding energies, and lattice binding energies on target sputtering, dose retention, and damage formation.
The authors performed a simulation study to explore the effects of different ion species and energies on target sputtering, dose retention, and damage formation.
This paper explores how to alter the effects of target materials on target sputtering, dose retention, and damage formation caused by the doping of energy ions in thin-body semiconductors.
It was found that the atomic density and surface binding energy of the target material affect the sputtering rate, and the sputtering rate of materials with low surface binding energy and low atomic density was higher.
silicon
The displacement energies of silicon and germanium are considered to be the same, but in some literatures the displacement energies of germanium are reported to be 30 electron volts.
The high sputtering rate of silicon-oxide (SiO2) and gallium arsenide (GaAs) is due to the low atomic density and surface binding energy of these materials.
During ion implantation, the atomic density, lattice density, surface binding energy, and lattice binding energy of the target material have important effects on target sputtering, dose retention, and damage formation.
Ion implantation in a multi-element target may result in preferential sputtering, which can result in more sputtering if one element is not as strongly bound to the lattice as the others.
Thin silicon bodies may be sputtered by a few nanometers due to ion implantation, depending on the ion species, energy, and dose.
In gallium arsenide, arsenic has almost twice the sputtering rate of gallium due to their different surface binding energies.
Thin silicon doping is seen as a problem in multi-gate field-effect transistors, as ion implantation may result in a significant reduction in dopant retention and sputtering of the target material.
Sputtering rate is more pronounced in materials with lower surface binding energies and lower atomic densities.
germanium
field effect transistors (FETs)
III-V semiconductor materials
According to the material properties provided in the literature, the atomic density of gallium nitride is twice that of germanium, which means that there are twice as many atoms of gallium nitride in one cubic centimeter as germanium. This balances out the difference in relative surface binding energies, resulting in similar erosion thicknesses for both materials.
When ion implantation is performed in germanium, the sputtering rate of germanium will be nearly twice as high as that of gallium, due to their different surface binding energies.
The displacement energies of silicon and germanium are considered to be the same, but in some literatures the displacement energies of germanium are reported to be 30 electron volts.
III-V semiconductor materials are widely used in multi-gate field-effect transistor devices, such as Ge FinFETs for PMOS and NMOS device applications.
Recently, InGaAs nanowire devices with gate lengths up to 60 nm have been reported.
Multi-gate field-effect transistors (FETs) are an important research topic that has made significant progress over the past decade and is widely used in products.
For multi-gate FET devices, the shift from silicon-based materials to other materials, such as Ge FinFETs and InGaAs nanowire devices, has become a shift in the industry.
Previous studies have pointed out that the angle of incident ions is critical to the damage and dose retention of the target material for multi-gate FET systems, and these key issues are explored through physical simulation.
When performing the simulation study, different ions (e.g., B, As, Sb) and energy values were selected to reflect the formation of ultra-shallow junctions in advanced technology, and ion incidence at different angles was simulated to simulate the conditions in a FinFET device.
It has been found that for materials such as GaAs, the sputtering rate is higher due to its low atomic density and surface binding energy, which may lead to changes in the chemical composition of the target semiconductor, which is a problem that needs to be addressed.