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SEMICONDUCTOR - Coggle Diagram
SEMICONDUCTOR
EXTRINSIC
Impure
Doped
Dopant specie
present
Other than group 4 are added
N type
Group 5 impurity is added
current flows due to the movement of free electrons and holes. Since the free electrons being the majority carriers and holes being the minority carriers, the net current will be due to the majority carriers i.e. free electrons.
Majority carriers : electrons
P type
Group 3 impurity is added
Hole flow moves from positive to negative
Majority carriers :
Hole
Greater conductivity than intrinsic
INTRINSIC
Pure
Undoped
No significant dopant specie
Group 4 elements :
Silicon, Germanium
crystalline solids intermediate in electrical conductivity between a conductor and an insulator.
silicon and germanium.
employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits.
P-N JUNCTION/ DIODE
Formation :
• P and n type are joint together
• Unidirectional
Forward biased
P type connected to (+) terminal
N type connected to (-) terminal
Depletion region gets narrower
Potential barrier decreases
Graph on positive axis
Reverse biased
P type connected to (-) terminal
N type connected to (+) terminal
Depletion region widens
Potential barrier increased
Graph on negative axis
2 terminal device
Potential barrier
Silicon 0.7V
Germanium 0.3V
