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nanoelectronics - Coggle Diagram
nanoelectronics
Single electron transistor
Conducting island made of gold or carbon nanoparticle
electrons tunnel from source>conducting island> drain
addition of single electron raises energy level of available electron states
tunneling may not be possible
coulomb blockade
can be lowered by applying sufficient voltage at gate electrode
passage of electrons can be controlled with voltage
thermally induced tunneling
Moore's Law
number of transistors on integrated chip doubles about every 2 years
transistors need to shrink to nanosize
problem: generation of excess heat
Malfunction of electronic devices
interconnects
Usually made of copper
Issues with copper interconnect
Increased resistance
Smaller interconnects
length scale decrease
more scattering at side walls and grain boundaries
more heat generated
reliability issues
cross sectional area decrease
more heat generated
reliability issues
electromigration
material in interconnect transported away from original site
occurs due to large current density
accelerates electrons
electrons collide with lattice ions
ions are dislodged
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affected by high temperatures
Electrons possess more energy
more likely for collision and scattering to happen
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solution
carbon nanotubes
types of carbon nanotubes
Armchair
(n,n)
Metallic
chiral
(n,m)
metallic
n-m=3i, where i is an integer
semiconductor
zigzag
(n,0) or (0,n)
metallic
n-m=3i, where i is an integer
semiconductor
Ballistic conduction
Mean free path>dimension of medium for electrons
electrons can propagate without scattering
negligible resistivity and heat dissipation
mean free path
average length electron can travel without hitting an obstacle and scattering
covalent bonding of carbon atoms
lesser electromigration
band gap
inversely related to diameter of carbon nanotube
