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Unit 2 - Differential Amplifiers - Coggle Diagram
Unit 2 - Differential Amplifiers
Single vs Differential ended
Vin/Vout WRT ground or not
Out of phase Vin1&V2, Vout1/Vout2
Amplitude difference unimportant
Differences
Single Ended
Differential Ended
Vout
Vou1 - Vin
Peak Vout1 = Vout2 = V0 => Vout = 2V0
Common mode level of Vout = 0
Pure AC signal
Advantages
Coupling corruption prevented
Supply Noise corruption prevented
Increased max achievable voltage
Max O/P swing: 2(VDD - VOD)
Amps need transistors in saturation
Simpler Biasing
O/P DC voltage already zero
Capacitor needed in single-ended
Higher Linearity
O/P linear to I/P
Constant gain
O/P varies only for large Vin
Common-mode level
Fixed/Centre potential
DC bias level
Keeps signal swing > 0
Volt without AC signal
Simple Differential Amplifiers
2 identical CS amp
Vin to gates
I/P & O/P swing around their CM level
Drawbacks
Clipping in O/P
Vout,cm = Vdd - IdRd
Vin, cm controls Id
Vin,cm decrease causes Vout,cm to increase
M1, M2 turn off at low Vin,cm
Workaround
Basic Differential Amplifier
Diagram
Tail current source Iss
Vout,cm = Vdd - RdIss/2
Vout,cm independent of Vin,cm
Current in M1, M2 constant at Iss/2
Qualitative Analysis
3 cases
Vin1 = Vin2
Vin1 << Vin2
Vin1 >> Vin2
I/O characteristics
Max/Min of Vout
independent of Vin,cm
Well-defined
Small signal gain
slope of Vout vsVin
Max at Vin1 = Vin2
Zero for large |Vin|
Non-linear for large Vin swings
Equilibrium at Vin1 = Vin2
Common-mode behaviour
Range of Vin,cm
VGS1,2 + VGS3 – VTH3 ≤ Vin,CM ≤ min[VDD – RDISS /2 + VTH1,2 , VDD ]
Range for Vout independent Vin,cm
All transistors in Saturation
No clipping
4 cases
Vin,cm = 0
M1, M2 Off
M3 deep triode region
Vout1 = Vout 2 = Vdd
Vin,cm > Vth
M1, M2 turn on
Id3 = Id1 + Id3 != constant
M3 in triode
Vout,1,2= Vdd - Id1,2*R1,2
VoutNOT independent of Vin,cm
Vin,cm large
Vin,cm = Vp = Vd3 > Vgs3-Vth3
M3 in Saturation
Id3 constant = Iss
M3 is current source
Vout independent of Vin,cm
Vout1,2 = Vdd - RdIss/2
Vin,cm v large
Vin1 exceeding Vout1 + Vth1
M1,M2 in triode region
Diff gain lowers
Vin,cm <= Vout1,2 + Vth1,2 = Vdd-RdIss/2 + Vth1,2
Vout constant until this point
Quantitative Analysis
Differential Voltage Gain
Derivation
find Vin
Use
find Id1 - Id2
find Gm max
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Max differential gain
The Expression
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find Vout
At 0 gain
Gm = 0 for DeltaV = sqrt(Iss*delta)
DeltaVin donated as DeltaVin1
Only one transistor is ON
Id1 or Id2 = Iss
Observations
Max Gm at DeltaVin = 0
Gm follows Av
DeltaVin1 is linearity/max input range
Gm decreases as DeltaVin1 increases
Gain and linearity tradeoff
Solve assignment on page 190
Small Signal Analysis
Half-circuit Method/Lemma
About
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Proof of lemma
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Without fully differential I/P
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Common-Mode Response
Common-mode suppression
Needs symmetrical circuit
Needs ideal tail current source
Fraction CM variation affects O/P
Types/Cases for non-ideality
Mismatched Rd
No expressions discussed
Vout1,2 = Vdd - Id1,2*Rd1,2
Vout1 != Vout2
Vout != 0
More severe than Rss != infinite case
Mismatched transistors
gm1 != gm2
Unequal dimensions & Vth
Assume non-ideal current source
Expression, small-signal gain
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Assume channel length modulation = body effect = 0
Non-ideal tail current source
Finding Av,cm expression
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Lowers Vx & Vy
Increases drain current
Vp increases with Vin
O/P resistance = Rss != 0
If Rss = infinite, Av = 0
Try exercise on pg 207
Differential Amp w/ MOS loads
Diode connected load
Drawbacks
consume voltage headroom
After connecting current source
Vx,ymax = Vdd - |Vgs - Vth| => HIGH => Good
For saturation, min V = Vgs - Vth
load replaced with resistor
Vx,y = Vdd - Vth3,4 => LOW
Vdsmin = Vgsmin = Vth
load be in saturated mode
O/P volt swing vs gain tradeoff
Overcome with OMOS current sources || diode loads
Av increase 5x with gm 1/5x
W/L stays same => Vout,cm same
gmp decreased 1/5x
gmp controlled by current, not W/L
for high Vgsp, O/P CM level low = Vdd - |Vgsp|
But this also Vgs increases
high gain needed means (W/L)p low
Av = -gmn/gmp
ron and rop >> 1/gmp, ignored
Av = -gmn(1/gmp || ron || rop)
pmos prevent body-effect
Load Rd replaced with pmos