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PHYSICAL PHENOMENA THAT AFFECT DESIGN PERFORMANCE AND DESIGN TECHNIQUES TO…
PHYSICAL PHENOMENA THAT AFFECT DESIGN PERFORMANCE AND DESIGN TECHNIQUES TO MITIGATE THEM PHYSICAL PHENOMENA THAT AFFECT
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WPE
High-energy doping ions scatter at the edge of the photoresistor well during ion implantation, and the dispersed ions are implanted on the MOSFET channel before the gate is formed.
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MATCHING
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Transistors that are not parallel to each other, become vulnerable to variations in mobility induced by stress can cause variations in its transconductance.
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Place the transistors in areas with a low voltage gradient, that is, place the transistors that require a greater degree of matching in the center.
Do not place contacts on the gate area, for this the poly must be extended.
STI
Scaling down CMOS devices requires complexity growing in modeling to account for new effects that affect the electrical behavior of the MOSFET due to the increasing density of integration.
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JOSÉ LUIS ROMO ARÁMBULA
MELANIE NICOLE MATA BARBOSA
JUNE 24th, 2021
DISEÑO ELECTRONICO