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Annealing, 分支補充 - Coggle Diagram
Annealing
growth
Driving force: lies in the surface energy of the grain boundaries. Grain boundary area down, surface energy is lowered
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bubble analogy
curvature induced growth by Gibbs Thompson effect is the chemical potential difference due to curvature
Rates
Assume that the rate of growth of the cells is proportional to the curvature of the cell walls of the average cell at a given instant of time
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Geometry of grain growth
Geometrical Coalescence
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for recovery, recrystallization, and grain growth
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Limiting factor
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T up, # of particles down, size up due to particle growth, then retarding effect of the inclusion down
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The free-surface effects
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Reduction of the net curvature of g.b. at a surface. Grain boundary near any free surface tend to perpendicular to the surface. Then cylindrical surface
The limiting grain size
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average grain size approaches the thickness of specimen, then grain growth will stop
inclusion size小, volume fraction of the second phase密, grain size 小
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recovery
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Properties change
Properties could be altered without an apparent change in the microstructure
(without the movement of g.b.)
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Processes
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Polygonization
When a bent single crystal is annealed, the curved crystal breaks up into a number of closely related small perfect crystal segments. Rearrangement of the dislocations into cell walls
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Dynamic recovery
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Different T recovery
Recovery at high T
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Polygonization, annihilation of dislocations
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Points
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thermal, stress help recombine partial dislocations
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