Wafering Process

Cleaning

Inspections

Packaging

Wafers are physically and chemically cleaned using ultra-pure water and chemicals.

Wafers flatness and surface cleanliness (particle-free) are key factors as a substrate for recent leading-edge ULSI devices. Individual wafer flatness and surface particles are measured using specially designed inspection tools to assure wafer quality.

Wafers are packaged in a clean shipping case, and sealed in a special moisture-proof bag.

Shipping

Wafers are placed in shock-absorbent shipping boxes for protection against damage caused by shock.

"Backside Gettering" to purify silicon

Wafer quality measurements

Physical dimensions
Flatness
Micro-roughness
Oxygen content
Crystal defects
Particles
Bulk resistivity

Measurement of Wafer Characteristics

Hot Point Probe

to determine whether a wafer is N or P type

Two probes make ohmic contact with the wafer surface. One is heated 25-100˚C hotter than the other. A voltmeter placed across the probes will measure a potential difference whose polarity indicates whether the material is N or P type.

For N-type sample: The majority carriers are electrons. At the hot probe, the thermal energy of the electrons is higher than the cold probe so the electrons will tend to diffuse away from the hot probe, driven by the temperature gradient. As the electrons diffuse away from the hot probe, they leave behind the positively charged, immobile donor atoms that provided the electrons. The negatively charged mobile electrons tend to build up near the cold probe, which results in the hot probe becoming positive with respect to the cold probe.

For P-type sample: The majority carriers are holes. The polarity of the induced voltage would be reversed.

Measurement of Sheet Resistance

four-point probe

"Van der Pauw"

allow to force the current through the two outer probes and measure the voltage drop with the two inner probes using a high-impedance voltmeter.

most common method of measuring the wafer resistivity

Problem with probe contacts: eliminated in the voltage measurement since no current flows through these contacts.

Measurement principle (Resistivity):

uses shapes on wafer

Hall Effect Measurement

determine the material type, carrier concentration and carrier mobility

When current flow (from left to right), electrons flow in the opposite direction (from right to left) and the magnetic field, B is normally tangential to the current flow. When the electron moves across, they will not be evenly distributed due to the magnetic field. As a result, top and bottom will have a different potential which can be measured.

Fourier Transform Infrared Spectroscopy (FTIR)

to measure oxygen and carbon which were introduced from CZ crystal growth process and control them

measures the absorption of infrared energy by the molecules in a sample. Many molecules have vibrational modes that absorb specific wavelengths when they are excited.

By sweeping the wavelength of the incident energy and detecting which wavelengths are absorbed, a characteristic signature of the molecules present is obtained.