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Semiconductor diodes, image, image, image, image, image, image, image,…
Semiconductor diodes
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Doping
The electrical characteristics of silicon and germanium are improved
by adding materials in a process called doping.
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p-n Junctions
the excess conduction-band electrons on the n-type side are attracted to the valence-band holes on the p-type
The electron migration results in a negative charge on the p-typeside of the junction and a positive charge on the n-type side of the junction
Zener region
At some point the reverse bias voltage is so large that the diode breaks down an the reverse current increases dramatically
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The point at which the diode changes from no-bias to forward-bias occurs when the electorns and holes are given sufficent energy to cross the p-n junction
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Diode capacitance
In reverse bias, the depletion layer is very large. The diode’s strong positive and negative polarities create capacitance (Ct). The amount of capacitance depends on thereverse voltage applied
In forward bias storage capacitance or diffusion capacitance (Cd) exists as the diode voltage increases
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