Please enable JavaScript.
Coggle requires JavaScript to display documents.
Litography Reflectivity of silicone= 0.6 - Coggle Diagram
Litography
Reflectivity of silicone= 0.6
1. Surface Preparaion
Cleaning
: removing any contaminants
Dehydration
: removing water
Priming (adhesion promoter)
:
Standard degrease wafer cleaning with Acetone or Methanol or Iso-propanol, for troublesome grease, oil or wax TCA or TCE can be used with ultrasonic agitation before acetone
HMDS is applied to the surface more hydrophobic
2. Photoresist application
PR thickness= 0.8-1.2 μm
Spin-coating
Resist dispense
Spin-up
Spin-off
Solvent evaporation
Spray-coating
For specific geometries (if there are some holes)
Dip-coating
Low thickness achievable
Meniscus coating
(similar to dip-coating)
Plasma coating
Soft bake
improves adhesion, uniformity
Alignment
and Exposure
Contact Aligner
Proximity Aligner
g= 5-25 μm apart, resolution is lost
Projection Aligner
Post- exposure bake
(heating up a bit to
increase the mobility, but not above Tg)
to reduce the effect of standing waves
Developing the bake
Soluble areas of PR are dissolved by the developer chemical
Transform the latent image into the pattern
Hard bake
(higher T)
Evaporate remaining solvent,
Improve adhesion
Development Inspection
Optical or SEM metrology
9. Plasma Etch
Alternative:
Additive process
By sputtering or evaporation
Wet Acid Etch
Dry Plasma Etch
Plasma treatment
(F plasma transform Si to Si floride volatile and removed)
PR Removal
Wet Acid Strip
Dry Plasma Strip (O2 ashing)