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High throughtput printing of In2O3:H for low-cost perovskite-silicon…
High throughtput printing of In2O3:H for low-cost perovskite-silicon tandem solar cells
description
logic
silicon PVs' efficiencies plateau
use metal-halide perovskite PV to create a tandem
it's expensive to manufacture a transparent electrode on the top of tandem
AP-CVD
definition&why
metal-halide perovskite PV
tandem
front-textured silicon
thermal damage to the perovskite during the growth of n- or p-type oxide
high mobility
pinhole-free In2O3:H
low sheet resistance
single junction perovskite solar cell
four-terminal and two-termal configuration
grow films conformally
why silicon PVs' efficiencies have been plateauing
abbreviation
photovoltaics (PVs)
atmospheric pressure chemical vapour deposition (AP-CVD)
atomic layer deposition (ALD)
transparent conducting oxides (TCOs)
hydrogen-doped indium oxide (In2O3:H)
power conversion efficiency (PCE)
Indium tin oxide (ITO)
formamidinium (FA)
zinc tin oxide (ZTO)
external quantum efficiency (EQE)
fill factor (FF)
levelized cost of electricity (LCOE)
passivated emitter and rear cell (PERC)
intrinsic thin layer (HIT)
, and Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)aminePoly(triarylamine)] (PTAA)
2,20,7,70-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,90-spirobifluorene (Spiro-OMeTAD)
[6,6]-phenyl-C61-butyric acid methyl
ester (PCBM)
colloidal quantum dot solar cells (CQDSCs)
23.6%-efficient monolithic perovskite/silicon tandem solar cells with improved stability
logic
definition&why
further discussion
hydrogen-doped indium oxide (In2O3:H)
correlate the effect of growth temperature and deposition rate on the optical and electronic properties of In2O3:H
Atom probe tomography
understand the mechanism of charge-carrier generation in these films
transparent top electrode
improve the stability
conduct photogenerated charge
admit light to the device stack