Please enable JavaScript.

Coggle requires JavaScript to display documents.

10_FOTODIODI - Coggle Diagram

- - - - impurity diffusion into the backside of the wafer is necessary
  - - - prevents the diffusion of the majority charge carriers in the layer of the intrinsic Si
      - The structure allow the absorption of the photon in the layer of the intrinsic Si
  - - - a lot of photons are absorbed outside
- - - - Electron and hole then drift in opposite directions with drift velocity ve and vh, respectively
      - reach the electrodes respectively at times te and
      - generate external photo-current
      - Total photocurrent is the sum of the hole and the electron photocurrent that last th and te, respectively
      - collceccted charge is = e
    - - pn junction is not uniform
      - pni, costant Eo
  - - - V = +ve forward bias mode.
      - V = -ve, When a large reverse bias is applied to the photodiode, the dark current becomes the reverse saturation current
        
        breakdown voltage
      - V = 0, In this state, the dark current IP=0.
  - - - series resistance
      - junction capacitance
        
        in pni, doesn't depend on the applied electric field
      - shunt resistance
    - - photovoltaic
        
        open circuit
        
        iext=0
        
        r=infinito
        
        short circuit
        
        R=0
      - photoconductive
        
        iext=ilambda
      - R
        
        HIGH
        
        High sensitivity
        
        low linear dynamic range
        
        LOW
        
        Low sensitivity
        
        high linear dynamic range
- - - - second carries
  - - - microscopio atomico
  - - - PSD
      - quadrant cell detector
      - CMOS camera