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Reviewer 3 Paper 8 Device fabrication (RS phenomenon divided into…

- - - - Have high performance (switching speed, endurance)
    - - Has lower power consumption but Ilrs/Ihrs and switching speeds are better in filamentary devices
  - - - Has high power conumption
- - - - Use Si wafer covered by a few-hundred nanometer SiO2 film
    - - For TMO deposition
        
        ALD
        
        In 3D crossbar devices
        only possible technique
        is ALD
        
        Sputtering
        
        Defective hence requires
        less voltage for breakdown
  - - - High quality graphene
      - MoS2
      - MoSe2
      - WSe2
      - WS2
      - h-BN
      - Temperature > 700 C
        
        Max temp for CMOS BeOL is 450 C so cannot grow on existing integrated circuits
        
        Typical solution to synthesize 2D material on suitable substrate
        then transfer it to desired sample using different methods
        (wet transfer with the assistance of a polymer scaffold)
        
        About 2D materials
        
        If 2D material's too thin and TE too large, cracks appear on 2D material below TE. CFs always form in these cracks, one way to control CF formation
        
        Current will flow across a region without 2D material
        
        The knowledge extracted may not be applicable to the desired material structure
        
        If transferred 2D material has wrinkles and polymer residue
        Resistance there increases so CF will not form there
        Reduces the effective area of the device
- - - - Not realistic since device operates in PVS
    - - Requires advanced hardware
    - - Can produce endurance overestimation