Please enable JavaScript.
Coggle requires JavaScript to display documents.
Reviewer 5 Paper 5 (State-of-the-art RRAM (Metallic electrodes including…
Reviewer 5 Paper 5
-
-
Before h-BN, several 2D materials have been explored
-
-
-
-
-
-
-
Switching mechanism
In TMO-based devices, it is based on O vacancies or metal ions movement
In Ti/h-BN/Cu devices
-
-
When using top electrodes Au or Pt, absence of RS because noble metals don't react like Ti did
-
Why forming free?
Most probably because
During CVD, some defective grain boundaries are formed
which create many atomically thin defective paths across
the layered h-BN stack
The presence of grain boundaries in the dielectric reduce
the energy-to-breakdown thus allowing its reversibility
-