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Reviewer 5 Paper 6 (ABOUT THE PAPER (Electrodes (Copper, Nickel-doped…
Reviewer 5 Paper 6
ABOUT THE PAPER
Active switching layer
Multilayer hexagonal boron nitride (h-BN)
Electrodes
Copper
Nickel-doped copper
Graphene
2D RRAM device
Memory behaviour is enabled by manipulation of boron (B)-deficient conductive filament
Cyclic release and diffusion of B
ions are responsible for switching
Advantages of the device
Low set/reset voltages
High ON/OFF current ratio
Good endurance
Low overall variability
Advantages of 2D materials over TMO-based technology
High thermal dissipation
Chemical stability
Flexibility
Transparency
About forming in metal/h-BN/metal
Vforming is between 2V to 4V, Vset = 0.7V, Vreset = -0.5V
Significant variability because of narrow/thick grain boundaries (formed during CVD growth)
Forming = CF generation by presence of intrinsic defective zones in h-BN layer
Low cycle-to-cycle variability, high device-to-device variability
About forming in G/h-BN/G
Vforming is 7V to 9V, Vset = 2V to 4V, Vreset = -0.5V
Switching mechanism appears to be an intrinsic property of the h-BN stack, involving B ions and vacancies
Have a larger memory window
Large SET voltage
misaligned Dirac points of upper and lower graphene layers
some voltage falls on graphene layers, reducing electric field in h-BN switching stack hence more voltage is required for that
Structure of device
2D insulator dielectric h-BN [don't need O ions]
Sandwiched by metallic or graphene electrodes