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BASIC ELECTRONICS ENGINEERING (BIPOLAR JUNCTION TRANSISTOR (BJT) (BIASING,…
BASIC ELECTRONICS ENGINEERING
FIELD EFFECT TRANSISTOR (
FET
)
CONSTRUCTION
SUBSTRATE OF DOPED SEMICONDUCTOR
MATERIALS
SILICON
GALLIUM ARSENIDE (GaAs)
HIGHER
ELECTRON MOBILITY
DRIFT VELOCTIES
AMPLIFIES WITH GaAs FET
HIGHER FREQ RESPONSE
LOWER NOISE AT VHF AND UHF
TYPES
MOSFET/IGFET
INSULATED-GATE/METAL-OXIDE-SEMICONDUCTOR
ISOLATOR(SiO2)
MESFET
METAL-SEMICONDUCTOR
OPERATED UP TO 30 GHz
MICROWAVE FREQUENCY
SUBSTITUTE P-N JUNCTION WITH A SCHOTTKY JUNCTION
JFET
JUNCTION FET
UNIPOLAR
TERMINALS
SOURCE(S)
DRAIN(D)
GATE(G)
OPERATION
PINCH-OFF
BREAKDOWN
TRIODE
P-N JUNCTION AS A GATE
HEMT/HFET
HIGH ELECTRON MOBILITY OR HETEROSTRUCTURE
FULLY DEPLETED WIDE-BAND-GAP MATERIAL
METAMORPHIC HEMT (mHEMT)
ADVANCED PHEMT
IRIDIUM CONTROLLED AND GRADED
LOW IRIDIUM; LOW NOISE
HIGH IRIDIUM; HIGH GAIN
BUFFER LAYER MADE OF AlInAs
PSEUDOMORPHIC HEMT (PHEMT)
FASTEST TRANSISTOR AVAILABLE
AMPLIFIES OVER 200 GHz
HETEROJUNCTION BIPOLAR TRANSISTOR
REACHES UP TO 600 GHz
DEVELOPED
JOHN ATALLA
CREATES ELECTRICAL FIELD
FLIPS FROM + TO -
CONTROLS SECOND CURRENT AND MODULATES
SEMICONDUCTOR FUNDAMENTALS
PROPERTIES
CONDUCTOR
INSULATOR
MATERIALS
TYPES
INSTRINSIC
PURE
EXTRINSIC
DOPED WITH IMPURITIES
N-TYPE
EXCESS ELECTRON
MAJORITY CARRIER ELECTRON
MINORITY CARRIER HOLE
PENTAVALENT MATERIALS (5 VALENCE ELECTRON)
ARSENIC
PHOSPHORUS
ANTIMONY
P-TYPE
MAJORITY CARRIER HOLE
MINORITY CARRIER ELECTRON
EXCESS HOLE
TRIVALENT MATERIALS (3 VALENCE ELECTRON)
BORON
GALLIUM
INDIUM
DOPED
LIGHT
HIGHER RESISTANCE
HEAVILY
LOWER RESISTANCE
IMPURITIES ALTER PROPERTIES
INSULATORS AT ABSOLUTE ZERO
LIMITED CONDUCTOR AT ROOM TEMP, 27*C
4 VALENCE ELECTRONS
BASIC
SILICON(Si)
GERMANIUM(Ge)
COMPOUND
GALLIUM ARSENIDE (GaAs)
ALUMINIUM ARSENIDE(AlAs)
GALLIUM PHOSPHIDE(GaP)
ENERGY-GAP(Ug)
INSULATORS Ug >5 ev
CONDUCTORS Ug=0 ev
DIFFERENCE BETWEEN
CONDUCTOR BAND
VALENCE BAND
SEMICONDUCTORS Ug=1.1 ev (Si); 0.67 ev (Ge)
REQUIRED
TRANSFER VALENCE ELECTRON
FROM VALENCE BAND TO CONDUCTION BAND
GREATER GAP
DIFFICULT TO PRODUCE ELECTRON
MORE VOLTAGE REQUIRED TO CONDUCT
ATOMIC BONDING
COVALENT
ATOMS OF MATERIALS SHARE ELECTRONS WITH ANOTHER ATOM
BINDS TWO ATOMS
AT 0K / ABSOLUTE ZERO
NO FREE ELECTRONS
VALENCE BOND LOCKED
METALLIC
ATTRACTIVE FORCES OF GROUP OF POSITIVE IONS AND ELECTRONS
FREE TO MOVE ABOUT ITS IONS
AT ROOM TEMP, 27*C
VALENCE ELECTRON ENERGIZED
MOVE TO COVALENT BAND
IONIC
ALIAS
ELECTROVALENT / ELECTROSTATIC
ATTRACTIVE FORCES OF OPPOSITELY CHARGED IONS
SEMICONDUCTOR DIODES
VARICAP DIODE
VOLTAGE CONTROLLED CAPACITOR
APPLICATIONS
RADIO DEMODULATOR
POWER CONVERSION
LOGIC GATES
IONIZING RADIATION DETECTOR
TEMPERATURE MEASURE
CHARGE COUPLED DEVICE
ZENER DIODE
DISCOVERED
DR. CLARENCE MELVIN
ZENER
DOPING CONTROLLED DEVICE
OPERATION
VOLTAGE REGULATOR
POPULAR DIODE TYPES
ZENER
CAN CONDUCT BACKWARDS
AVALANCHE
CONDUCT IN REVERSE WHEN VOLTAGE EXCEEDS BREAKDOWN VOLTAGE
AVALANCHE EFFECT
GOLD DOPED
GOLD LOWERS MINORITY CARRIER SUPPRESSION
TRANSIENT VOLTAGE SUPPRESSION(TVS)
AVALANCHE DIODES USED TO PROTECT OTHER SEMICONDUCTOR DEVICES
NORMAL (P-N)
USUALLY MADE OF DOPED SILICON
PHOTODIODE
MATERIALS ALLOW LIGHT TO PASS
LIGHT-EMITTING DIODE(LED)
CARRIERS EMIT PHOTONS
LASER
RESONANT CAVITY BY POLISHED PARALLEL END FACES
SCHOTTKY
MAJORITY CARRIER DEVICE
SNAP-OFF/STEP RECOVERY
REVERSE CONDUCTION CEASE ABRUPTLY
ESAKI/TUNNEL
MOST RESISTANT TO NUCLEAR RADIATION
GUNN
ALLOW HIGH FREQUENCY MICROWAVE OSCILLATOR
POINT CONTACT
1N34, GROUP-3 METAL IN CONTACT
VARICAP/VARACTOR
VOLTAGE-CONTROLLED CAPACITOR
CURRENT-LIMITING FIELD-EFFECT
A JFET WITH GATE SHORTED TO SOURCE
PN JUNCTION
P-TYPE + N-TYPE
DEPLETION REGION
NO ELECTRON NOR HOLES
OPERATION
FORWARD BIAS
VOLTAGE APPLIED
POSITIVE AT P-TYPE
NEGATIVE AT N-TYPE
NARROWS DEPLETION REGION
ENABLES FLOW OF MAJORITY CARRIERS (HOLES)
REVERSED BIAS
VOLTAGE APPLIED
NEGATIVE AT P-TYPE
POSITIVE AT N-TYPE
WIDENS DEPLETION REGION
NO CURRENT FLOW
ONLY LEAKAGE/MINORITY CURRENT FLOWS
NO APPLIED BIAS
FLOW OF CHARGE IS ZERO
JUNCTION DIODE
ONE DIRECTION
OPERATION
REVERSE
ONLY LEAKAGE/MINORITY CURRENT FLOWS
NO FORWARD CURRENT
FORWARD BIAS
VOLTAGE REQUIRED
SILICON 0.7V
GERMANIUM 0.3V
BIPOLAR JUNCTION TRANSISTOR (
BJT
)
EPONYM
TRANSISTOR
TRANS
FER AND RES
ISTOR
THREE TERMINAL
CURRENT CONTROLLED SOLID STATE DEVICE
AMPLIFY SIGNALS
DISCOVERED
JOHN BARDEEN AND WALTER BRATTAIN
DEVELOPED
THEORY OF JUNCTION RESISTOR
WILLIAM SHOCKLEY
JUNCTIONS
BASE-EMITTER
BASE-COLLECTOR
CONSTRUCTION
TWO N-TYPE AND ONE P-TYPE
NPN TRANSISTOR
TWO P-TYPE AND ONE N-TYPE
PNP TRANSISTOR
MAIN CONDUCTION CHANNEL
BOTH ELECTRONS AND HOLES
BIASING
EMITTER-STABILIZED
SMALLER POWER GAIN; MORE STABLE THAN FIXED
FIXED
GREATEST POWER GAIN; MOST UNSTABLE
VOLTAGE FEEDBACK
STABILITY SAME AS VOLTAGE DIVIDER BUT A BIT SMALLER; REQUIRES LESS RESISTOR
APPLYING DC VOLTAGE TO TRANSISTOR TO ACHIEVE PREFERRED REGION OF OPERATION
VOLTAGE DIVIDER
MOST STABLE; REQUIRES MORE RESISTOR
CRITERIA
POWER GAIN
STABILITY
AFFECTED BY TEMPERATURE
MAINTAINS ITS OPERATING POINT OR QUIESCENT POINT (Q-POINT)
USES CURRENT CARRYING PN JUNCTIONS
TRANSISTOR CONFIGURATION
COMMON BASE
APPLICATION
AMPLIFIER
COMMON EMITTER
APPLICATION
IMPEDANCE MATCHING ( HIGH TO LOW)
COMMON COLLECTOR
APPLICATION
IMPEDANCE MATCHING (LOW TO HIGH)
BASIC OPERATION
REVERSE BIAS
REGION
CUT-OFF/OFF MODE
B-E AND B-C JUNCTIONS ARE REVERSE BIASED
SATURATION/ON MODE
B-E AND B-C JUNCTIONS ARE FORWARD BIASED
ACTIVE
B-E JUNCTION IS FORWARD-BIASED WHILE B-C IS REVERSE BIAED
FORWARD BIAS
INTRODUCTORY ELECTRONICS
ATOMIC THEORY
CONTRIBUTOR
ERNEST RUTHERFORD
DISPROVED THOMPSON ATOMIC MODEL
THROUGH RUTHERFORD ATOMIC MODEL
MASS CONCENTRATED ON NUCLEUS
PROPOSED BY SIR JOSEPH THOMPSON
DISCOVERED ELECTRON
PLUM PUDDING
DISCOVERED PROTON
ADVANCED
NIELS BOHR
THROUGH BOHR ATOMIC MODEL
MODERN QUANTUM ATOM
WIDELY ACCEPTED TODAY
POSTULATES
1ST
ELECTRON ORBITS ARE DISCRETE
2ND
ENERGY CHANGE IS QUANTIZED
3RD
MECHANICS DO NOT HOLD WHEN ELECTRONS ARE IN BETWEEN ORBITS
4TH
ANGULAR MOMENTUM IS QUANTIZED
QUANTIZED ORBITS
FOUNDER
JOHN DALTON
MODERN ATOMIC THEORY
PHILOSOPHICAL
ATOMISM
ATOM
NUCLEONS
PROTONS+NEUTRONS
CONFINED
NUCLEUS (CENTER)
PARTICLES INSIDE
QUARK
MADE UP OF
NEUTRONS
DISCOVERED BY
JAMES CHADWICK
PROTONS (+)
more proton(+)
cation
positive ion
DISCOVERED BY
ERNEST RUTHERFORD
ELECTRONS (-)
more electron (-)
anion
negative ion
DISCOVERED BY
JOSEPH THOMPSON
SMALLEST PARTICLES
IN
ELEMENT
100+
DIFFERING # OF NEUTRON
ISOTOPES
REACTION
CHEMICAL COMPOUND
COMBINED TO FORM MOLECULES
OPPOSITE ATTRACT, LIKE REPEL
ATOMIC PARTICLES
ALPHA
NUCLEUS OF HELIUM
NEUTRINO
NO CHARGE, ZERO REST MASS
DEUTERON
NUCLEUS OFDEUTERIUM
POSITRON
FIRST ANTIMATTER
ANNIHILATION
GREEK "NOT DIVISIBLE"
BASIC BLDG BLK MATTER
REVOLUTIONIZED
ERWIN SCHRODINGER
ELECTRON BEHAVE LIKE WAVES
ATTRIBUTED
WAVE/QUANTUM MECHANICS
ALSO INDEPENDENTLY DEVELOPED
WERNER HEISENBERG