Please enable JavaScript.

Coggle requires JavaScript to display documents.

AK RM CH IDEAL (Photo Current, Diamond / ZnO Heterojunction (:paperclip…

- - - - 01 - P-type B-doped diamond (BDD) film with a thickness of ~ 4 um was fabricated on silicon by microwave CVD methods
        02 - The fabrication of ZnO NRs on BDD substrate was carried out by thermal vapor transport method. Mixed raw powders of ZnO and aluminum (Al) were heated in the quartz tube at temperature of 850 degree C
        03 - BDD substrates were placed downstream from the source to the other end of the tube at around 500 degree C. The experiments were under a constant pressure of 6E-4 Pa
- - - - :paperclip: XPS and optical studies of different morphologies of ZnO nanostructures prepared by microwave methods
        
        01 - Rezapour and Talbian [16] have synthesized crystalline ZnO by sol-gel synthesis methods
        
        02 - Lu et al. [17] have shown that the optical transmittance of Al-doped ZnO films can be improved using ZnO nanorods synthesized by aqueous chemical growth technique, where the length and diameter of the rods were controlled by the OH- concentration of hexa- methenamine in the solution.
        
        03 - Tsai et al. [18] have studied the effect of ultraviolet treatment on the structural and optical properties of ZnO nanoparticles and showed that ultraviolet treatment may induce the formation of surface oxygen vacancies leading to hydroxyl adsorption.
        :paperclip: Effects of ultraviolet treatment on the optical and structural properties of ZnO nanoparticles
        
        :pencil2: Introduction synthesize methode
        
        :pencil2: Experimental
        
        Zinc nitrate tetrahydrate
        
        Zinc acetate dehydrate
        
        Zinc chloride
      - :paperclip: Synthesis of ZnO Nanostructures Using Domestic Microwave Oven Based Remote Plasma Deposition System
      - :paperclip: Microwave synthesis and characterization of ZnO with various morphologies
    - - :paperclip: Effects of ultraviolet treatment on the optical and structural properties of ZnO nanoparticles
        
        :pencil2: PL
        The PL emission intensity corresponding to visible region could be related to defects density and helps to analyze the crystalline quality and stoichiometry of
        the nanoparticle. The peak at ∼3.4 eV is BEL. This is attributed to the recombination of free excitons of ZnO [26].
        
        [26] Growth and properties of ZnO nanorod and nanonails by thermal evaporation
    - - :newspaper: Effect of annealing on the properties of (100) ZnO films prepared by chemical vapor deposition utilizing zinc acetate dihydrate
        
        ref.9
        Structural Order of Nanocrystalline ZnO Films
        
        ref.13
        Factors influencing the chemical vapor deposition of oriented ZnO films using zinc acetate
        
        ref.12
        An XPS study of zinc oxide thin film growth on copper using zinc acetate as a precursor
        
        ref.14
        Synthesis and properties of ZnO films with (1 0 0)
        orientation by SS-CVD
        
        ref.15
        A simple growth route towards ZnO thin films and nanorods
        
        ref.16
        Synthesis and optical properties of nanocrystalline ZnO powders by a simple method using zinc acetate dihydrate and poly(vinyl pyrrolidone)
        
        Experiment
        ZnO film were prepared by SS-CVD utilizing 0.5g of zinc acetate dihydrate as the sublimation source in a tube furnace.
    - - :newspaper:ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition
        Photo luminescence
        The emission peak for the N-doped ZnO thin film broadens with the central peak redshifted to 389nm (3.19eV), alongside with two pronounced shoulders, one at the original 377nm and the other at 398nm. these change can be understood in terms a mixture of free exciton emission and nitrogen-related emission such as donor-acceptor-pair(DAP) or electron - acceptor transition. The PL spectra of N-doped ZnO thin films confirm that nitrogen serves as relativity shallow acceptor in ZnO. Besides the near-band-edge emission, a much weaker, green-band emission at around 550nm (2.25eV) was also observed, which is generally attributed to radiative recombination at defects such as oxygen vacancies.
        ref. 19 Bound exciton and donor–acceptor pair recombinations in ZnO
        ref. 20 Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy
        ref. 21 Mechanisms behind green photoluminescence in ZnO phosphor powders
        ref. 22 Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO