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Zinc oxide (Bulk, thin film (Post-Process (Hydrogen Treatment (atomic…
Zinc oxide
Bulk, thin film
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Post-Process
Hydrogen Treatment
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:paperclip::Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO (2002)
:red_flag:ultraviolet emission spectra
:paperclip::Effects of hydrogen doping through ion implantation on the electrical conductivity of ZnO
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atomic layer deposition
New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
At thicknesses well below 200nm, the H-doped ALD ZnO films maintain optimal resistivities near 7x10E-4 Ohm cm along with average transmittance values of ~92% from 400 to 1000 nm.
Sputtering, mix reactor gas with hydrogen
Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering
increasing XRD, Band Gap, Carrier concentration
MOCVD
Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin film
We demonstrate that combinations of O2 and H2 plasma treatments can be used to manipulate the carrier density in ZnO films
Oxygen plasma treatment
Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-Atomic Layer Deposition
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NanoStructure
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Using Microwave
:paperclip: XPS and optical studies of different morphologies of ZnO nanostructures prepared by microwave methods
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02 - Lu et al. [17] have shown that the optical transmittance of Al-doped ZnO films can be improved using ZnO nanorods synthesized by aqueous chemical growth technique, where the length and diameter of the rods were controlled by the OH- concentration of hexa- methenamine in the solution.
03 - Tsai et al. [18] have studied the effect of ultraviolet treatment on the structural and optical properties of ZnO nanoparticles and showed that ultraviolet treatment may induce the formation of surface oxygen vacancies leading to hydroxyl adsorption.
:paperclip: Effects of ultraviolet treatment on the optical and structural properties of ZnO nanoparticles
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:paperclip: Synthesis of ZnO Nanostructures Using Domestic Microwave Oven Based Remote Plasma Deposition System
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Heterojunction
:paperclip::Electrical transport behavior of n-ZnO nanorods/p-diamond heterojunction device at higher temperatures
:calendar:2012
:paperclip::Ultraviolet photoelectrical properties of a n-ZnO nanorods/p-diamond heterojunction
:calendar:2015
:red_flag:UV Photodector
:paperclip::The fabrication and photoresponse of ZnO/diamond film heterojunction diode
:calendar:2012
:explode: Error
Zinc Oxynitride
:paperclip: (2006) Optical band gap of zinc nitride films prepared on quartz substrates form a zinc nitride target by reactive RF magnetron sputtering
:paperclip: (1998) Optical Properties of Zinc Oxynitride Thin Films
1. Thin film prepared by RF sputtering with ZnO ceramic target and gas mixture of Argon and Nitrogen.
2. Adjust nitrogen concentration 0~75%.
3. XRD, XPS and Optical properties
:paperclip:(1998) Structural, electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering.
1. Poly-crystalline Zn3N2 films were formed at N2 concentration more than 20%
2. Ar was very effective to make [100] preferred growth of Zn3N2 crystalline.
3. Zn3N2 films showed n-type conduction.
4. The resistivity increased with the nitrogen concentration form 1.4E-3 to 1.0E-2 Ohm - cm
5. decrease the carrier concentration from 1.2E+20 to 6.0E+18 cm-3
:paperclip: (2013) Zinc nitride films prepared by reactive RF magnetron sputtering of zinc in nitrogen containing atmosphere
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